A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications

Thermomechanical Reliability Challenges For 3D Interconnects With ThroughSilicon Vias

Continual scaling of on-chip wiring structures has brought significant challenges for materials and processes beyond the 32 nm technology node in microelectronics. Recently threedimensional (3-D) integration with through-silicon-vias (TSVs) has emerged as an effective solution to meet the future interconnect requirement. Among others, thermo-mechanical reliability is a key concern for the devel...

High-resolution X-ray computed tomography of through silicon vias for RF MEMS integrated passive device applications

Thermomechanical strain measurements by synchrotron x-ray diffraction and data interpretation for through-silicon vias

Characterization of thermal stresses and plasticity in through-silicon via structures for three-dimensional integration

Through-silicon via (TSV) is a critical element connecting stacked dies in three-dimensional (3D) integration. The mismatch of thermal expansion coefficients between the Cu via and Si can generate significant stresses in the TSV structure to cause reliability problems. In this study, the thermal stress in the TSV structure was measured by the wafer curvature method and its unique stress charact...

Four-wire orthogonal structure for accurate measurement of fluid velocity and wind flow direction using silicon micro-machining on silicon nitride membranes

Microelectromechanical thermal sensors are one of the most accurate and important tools for measuring the direction and velocity of an acoustic wave and winds. Detection of wind direction and speed in different ranges has different applications such as meteorology, wind power plants, gas flow measurement in smart building and gas consumption of power plants. In this paper, a four wires sensor i...